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High-Precision Porous Ceramic Vacuum Chuck - JiFeng Ceramics

Ceramic Structural Components/

Porous Silicon Carbide Ceramic Chuck

Porous silicon carbide (SiC) ceramic chuck is made from high purity powder, via reaction bonding or gel casting.
It kinda has controlled porosity but still brings strong thermal conductivity and mechanical resilience, like it’s balanced on purpose.
This porous ceramic vacuum chuck meets SEMI F47 standards, for semiconductor tools.
Great for wafer handling, photovoltaic fabrication, and laser processing, it helps keep stable results with no contamination, even when the temperature runs high and the precision demands are strict.

  • Product Details
  • Technical Specifications

Core Advantages Of Porous Ceramic Vacuum Chuck

Extreme temperature resistance

Long-term working temp 1600°C; thermal shock ΔT ≥ 500°C.

Precision micro-porous adsorption

Porosity 30–70%, pore size 1–50 μm; vacuum adsorption ≥ 0.08 MPa for ultra-thin wafers.

Corrosion & wear resistance

Resists pH 1–14 & plasma erosion; HV10 2200–2800; service life 3× of graphite chucks.

Ultra-high flatness

≤ 0.005 mm after precision grinding.

Key Applications Of Porous Ceramic Vacuum Chuck

1.Semiconductor & Electronics

  • Wafer bonding / temporary bonding: flatness ≤0.005 mm for 12-inch wafer thinning.
  • Lithography thermal management: temperature fluctuation ≤±0.1°C.

2.Photovoltaic & New Energy

  • PERC/TOPCon solar cell sintering furnace: 1600°C, breakage rate ≤0.01%.
  • SiC epitaxial tray: metal impurity ≤1 ppm for MOCVD/MBE.

3.Laser & Precision Machining

  • High-power laser cutting chuck: resists laser ablation ≥1 kW/cm².
  • 3D printing substrate: porous ventilation reduces powder adhesion.

4. High-Temperature Industrial Equipment

  • Sintering furnace setter: creep resistance, load ≥50 kg/m² at 1600°C.
  • Vacuum brazing fixture: resists Ag-Cu-Ti solder; reusable ≥1000 cycles.

JiFeng Ceramics Customization Services

Pore structure

uniform / gradient / directional channels for vacuum/gas control.

Surface treatment

CVD SiC coating, anti-oxidation SiO₂/Al₂O₃ coating.

Dimensions

diameter φ100–φ600 mm, thickness 5–50 mm; rectangular / special shape.

Cost advantage

40–60% lower than imported brands.

ParameterDetails
Material PuritySiC ≥99.5%, free Si ≤0.5%
Porosity30%–70% (gradient pore customizable)
Average Pore Size1–50 μm (laser drilling / pore-forming agent)
Thermal Conductivity120 W/m·K (at 25°C)
Bending Strength≥150 MPa (porous structure)
Flatness≤0.005 mm (precision ground)
CertificationsSEMI F47 (semiconductor)

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