Porous Silicon Carbide Ceramic Chuck Manufacturer & Supplier

Ultra-high thermal conductivity: 120 W/m·K (5× of alumina), fast heat dissipation, reduces thermal deformation.

Extreme temperature resistance: Long-term working temp 1600°C; thermal shock ΔT ≥ 500°C.

Precision micro-porous adsorption: Porosity 30–70%, pore size 1–50 μm; vacuum adsorption ≥ 0.08 MPa for ultra-thin wafers.

Corrosion & résistance à l'usure: Resists pH 1–14 & plasma erosion; HV10 2200–2800; service life 3× of graphite chucks.

Ultra-high flatness: ≤ 0.005 mm after precision grinding.

Wafer bonding / temporary bonding: flatness ≤0.005 mm for 12-inch wafer thinning.

Lithography thermal management: temperature fluctuation ≤±0.1°C.

PERC/TOPCon solar cell sintering furnace: 1600°C, breakage rate ≤0.01%.

SiC epitaxial tray: metal impurity ≤1 ppm for MOCVD/MBE.

High-power laser cutting chuck: resists laser ablation ≥1 kW/cm².

3D printing substrate: porous ventilation reduces powder adhesion.

Sintering furnace setter: creep resistance, load ≥50 kg/m² at 1600°C.

Vacuum brazing fixture: resists Ag-Cu-Ti solder; reusable ≥1000 cycles.

Pore structure: uniform / gradient / directional channels for vacuum/gas control.

Surface treatment: CVD SiC coating, anti-oxidation SiO₂/Al₂O₃ coating.

Dimensions: diameter φ100–φ600 mm, thickness 5–50 mm; rectangular / special shape.

Cost advantage: 40–60% lower than imported brands.

Parameter	Details
Pureté du matériau	SiC ≥99.5%, free Si ≤0.5%
Porosité	30%–70% (gradient pore customizable)
Average Pore Size	1–50 μm (laser drilling / pore-forming agent)
Conductivité thermique	120 W/m·K (at 25°C)
Bending Strength	≥150 MPa (porous structure)
Platitude	≤0.005 mm (precision ground)
Certifications	SEMI F47 (semi-conducteur)