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Semiconductor Equipment Components -JiFeng Ceramics

Composants structurels en céramique/

Semiconductor Equipment Components

Semiconductor Equipment Components are manufactured from high-purity ceramics (Al₂O₃/AlN/SiC/Si₃N₄/ZrO₂) or special alloys (Invar/AlSiC) via precision machining and surface treatment. They meet the strict requirements of semiconductor manufacturing for cleanliness, résistance à la corrosion, et stabilité thermique, and are widely used in wafer handling, etching, deposition, lithography, and testing equipment.

  • Détails du produit
  • Spécifications techniques

Core Advantages Of Ceramic Semiconductor Equipment Components

Nanometer‑Level Precision

Flatness ≤0.005mm, surface roughness Ra≤0.1μm, ideal for wafer transfer & lithography alignment.

Extreme Environment Resistance

Operating temp 800–1600°C; plasma & acid/alkali resistant (pH 1–14); service life ×5+ vs metal.

Ultra-High Cleanliness

Metal ion leaching ≤1ppm; no particle shedding (NAS 1638 Class 1); EUV & high-purity process compatible.

Excellent Thermal Management

AlN thermal conductivity ≥170W/m·K; CTE matches silicon (4.5×10⁻⁶/℃), reduces thermal stress.

Applications typiques & Material Selection

1. Wafer Transport & Soutien

Wafer Chuck

Materials: Alumine (Al₂O₃, purity ≥99.5%) or Silicon Carbide (SiC, purity ≥99.9%).
Performance: Electrostatic adsorption force ≥0.1MPa, flatness ≤0.003mm, compatible with thinning and bonding of 12-inch wafers.

Vacuum Chamber Flange

Matériel: Nitrure d'aluminium (AIN, thermal conductivity ≥170W/m·K).
Performance: Gas tightness ≤1×10⁻⁹ Pa·m³/s, suitable for etching and PVD equipment.

2. Gas Distribution & Reaction Control

Gas Distribution Plate

Matériel: Yttria-Stabilized Zirconia (YSZ), resistant to plasma erosion.
Performance: Micropore diameter tolerance ±0.005mm, uniformity error ±2%.

Heater Base

Matériel: Carbure de silicium (SiC), temperature resistance up to 1600°C.
Performance: Resistance uniformity ≤±1%, designed for MOCVD epitaxial growth.

3. Lithography & Inspection Equipment

EUV Optical Lens Base

Matériel: Low-expansion Invar Alloy, CTE ≤1×10⁻⁶/°C.
Performance: Thermal stability ±0.01μm/°C, compatible with processes below 7nm.

Wafer Alignment Stage

Matériel: Lightweight AlSiC ceramic composite.
Performance: Repeat positioning accuracy ±10nm, matches lithography focusing systems.

Why Partner with JiFeng Ceramics?

Material Selection

Alumine / Nitrure d'aluminium / Carbure de silicium / Special Alloys, compatible with diverse semiconductor process requirements.

Process Optimization

Precision grinding (tolerance ±0.001mm) and CVD coating for superior wear and plasma resistance.

Functional Integration

Embedded electrodes and sensors, matching intelligent temperature control and real-time monitoring systems.

Cost Advantage

Adopts domestic high-purity powder and machining technologies, with prices 30%–50% lower than imported brands.

ItemDétails
Matériaux CéramiquesSi₃N₄, Al₂O₃, ZrO₂, AIN, SiC
Machining Accuracy±0.01mm; Flatness 0.003mm; Parallelism 0.005mm
Key PropertiesRésistant à l'usure, high temp resistant, haute dureté, isolation, anti-corrosion
ColorsBlanc, beige, black
CustomizationCustomizable per customer drawing

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