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High-Precision Porous Ceramic Vacuum Chuck - Цзифэн Керамика

Керамические структурные компоненты/

Porous Silicon Carbide Ceramic Chuck

Porous silicon carbide (Карбид кремния) ceramic chuck is made from high purity powder, via reaction bonding or gel casting.
It kinda has controlled porosity but still brings strong thermal conductivity and mechanical resilience, like it’s balanced on purpose.
Этот porous ceramic vacuum chuck meets SEMI F47 standards, for semiconductor tools.
Great for wafer handling, photovoltaic fabrication, and laser processing, it helps keep stable results with no contamination, even when the temperature runs high and the precision demands are strict.

  • Подробная информация о продукте
  • Технические характеристики

Core Advantages Of Porous Ceramic Vacuum Chuck

Extreme temperature resistance

Long-term working temp 1600°C; thermal shock ΔT ≥ 500°C.

Precision micro-porous adsorption

Porosity 30–70%, pore size 1–50 μm; vacuum adsorption ≥ 0.08 MPa for ultra-thin wafers.

Corrosion & износостойкость

Resists pH 1–14 & plasma erosion; HV10 2200–2800; service life 3× of graphite chucks.

Ultra-high flatness

0.005 mm after precision grinding.

Key Applications Of Porous Ceramic Vacuum Chuck

1.Полупроводник & Электроника

  • Wafer bonding / temporary bonding: flatness ≤0.005 mm for 12-inch wafer thinning.
  • Lithography thermal management: temperature fluctuation ≤±0.1°C.

2.Photovoltaic & New Energy

  • PERC/TOPCon solar cell sintering furnace: 1600°С, breakage rate ≤0.01%.
  • SiC epitaxial tray: metal impurity ≤1 ppm for MOCVD/MBE.

3.Laser & Прецизионная обработка

  • High-power laser cutting chuck: resists laser ablation ≥1 kW/cm².
  • 3D printing substrate: porous ventilation reduces powder adhesion.

4. High-Temperature Industrial Equipment

  • Sintering furnace setter: creep resistance, load ≥50 kg/m² at 1600°C.
  • Vacuum brazing fixture: resists Ag-Cu-Ti solder; reusable ≥1000 cycles.

JiFeng Ceramics Customization Services

Pore structure

uniform / gradient / directional channels for vacuum/gas control.

Surface treatment

CVD SiC coating, anti-oxidation SiO₂/Al₂O₃ coating.

Размеры

diameter φ100–φ600 mm, thickness 5–50 mm; rectangular / special shape.

Cost advantage

40–60% lower than imported brands.

ПараметрDetails
Material PuritySiC ≥99.5%, free Si ≤0.5%
Пористость30%–70% (gradient pore customizable)
Average Pore Size1–50 μm (laser drilling / pore-forming agent)
Теплопроводность120 Вт/м·К (at 25°C)
прочность на изгиб≥150 MPa (porous structure)
Плоскостность≤0.005 mm (precision ground)
СертификатыSEMI F47 (semiconductor)

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