JiFeng-Keramik
Core Advantages Of Ceramic Semiconductor Equipment Components
Nanometer‑Level Precision
Flatness ≤0.005mm, surface roughness Ra≤0.1μm, ideal for wafer transfer & lithography alignment.
Extreme Environment Resistance
Betriebstemperatur 800–1600 °C; plasma & acid/alkali resistant (pH-Wert 1–14); service life ×5+ vs metal.
Ultra-High Cleanliness
Metal ion leaching ≤1ppm; keine Partikelabgabe (NAS 1638 Class 1); EUV & high-purity process compatible.
Excellent Thermal Management
AlN thermal conductivity ≥170W/m·K; CTE matches silicon (4.5×10⁻⁶/℃), reduces thermal stress.
Typische Anwendungen & Material Selection
1. Wafer Transport & Unterstützung
Wafer Chuck
Leistung: Electrostatic adsorption force ≥0.1MPa, flatness ≤0.003mm, compatible with thinning and bonding of 12-inch wafers.
Vacuum Chamber Flange
Leistung: Gas tightness ≤1×10⁻⁹ Pa·m³/s, suitable for etching and PVD equipment.
2. Gas Distribution & Reaction Control
Gas Distribution Plate
Leistung: Micropore diameter tolerance ±0.005mm, uniformity error ±2%.
Heater Base
Leistung: Resistance uniformity ≤±1%, designed for MOCVD epitaxial growth.
3. Lithografie & Inspection Equipment
EUV Optical Lens Base
Leistung: Thermal stability ±0.01μm/°C, compatible with processes below 7nm.
Wafer Alignment Stage
Leistung: Repeat positioning accuracy ±10nm, matches lithography focusing systems.
Why Partner with JiFeng Ceramics?
Material Selection
Aluminiumoxid / Aluminum Nitride / Siliziumkarbid / Special Alloys, compatible with diverse semiconductor process requirements.
Process Optimization
Precision grinding (tolerance ±0.001mm) and CVD coating for superior wear and plasma resistance.
Functional Integration
Embedded electrodes and sensors, matching intelligent temperature control and real-time monitoring systems.
Cost Advantage
Adopts domestic high-purity powder and machining technologies, with prices 30%–50% lower than imported brands.
