Semiconductor Equipment Structural Components

Kernvorteile

✅ Nanometer‑Level Precision

Flatness ≤0.005mm, surface roughness Ra≤0.1μm, ideal for wafer transfer & lithography alignment.

✅ Extreme Environment Resistance

Operating temp 800–1600°C; plasma & acid/alkali resistant (pH 1–14); service life ×5+ vs metal.

✅ Ultra-High Cleanliness

Metal ion leaching ≤1ppm; no particle shedding (NAS 1638 Class 1); EUV & high-purity process compatible.

✅ Excellent Thermal Management

AlN thermal conductivity ≥170W/m·K; CTE matches silicon (4.5×10⁻⁶/℃), reduces thermal stress.

Typische Anwendungen & Material Selection

Wafer Handling & Unterstützung

Wafer Chuck: Al₂O₃(99.5%) / SiC(99.9%); flatness ≤0.003mm; electrostatic force ≥0.1MPa.

Vacuum Chamber Flange: AlN; hermeticity ≤1×10⁻⁹ Pa·m³/s.

Gas Distribution & Reaction Control

Gas Distribution Plate: YSZ (plasma resistant); pore tolerance ±0.005mm.

Heater Base: SiC; temp resistance 1600°C; resistance uniformity ≤±1%.

Lithografie & Inspection

EUV Optic Holder: Invar alloy (ultra-low CTE).

Wafer Alignment Stage: AlSiC; positioning repeatability ≤±10nm.

Our Service Strengths

Full customization: material selection, precision grinding, CVD coating.

Functional integration: embedded electrodes & sensors.

Cost advantage: 30–50% lower than imported brands.