Core Advantages Of Ceramic 半導体装置部品
Nanometer‑Level Precision
Flatness ≤0.005mm, 表面粗さRa≦0.1μm, ideal for wafer transfer & lithography alignment.
極限環境耐性
動作温度 800 ~ 1600°C; plasma & 耐酸性/耐アルカリ性 (pH 1 ~ 14); service life ×5+ vs metal.
Ultra-High Cleanliness
Metal ion leaching ≤1ppm; no particle shedding (NAS 1638 クラス 1); EUV & high-purity process compatible.
Excellent Thermal Management
AlN thermal conductivity ≥170W/m·K; CTE matches silicon (4.5×10⁻⁶/℃), reduces thermal stress.
代表的な用途 & Material Selection
1. Wafer Transport & サポート
ウェーハチャック
パフォーマンス: Electrostatic adsorption force ≥0.1MPa, flatness ≤0.003mm, compatible with thinning and bonding of 12-inch wafers.
Vacuum Chamber Flange
パフォーマンス: Gas tightness ≤1×10⁻⁹ Pa·m³/s, suitable for etching and PVD equipment.
2. Gas Distribution & Reaction Control
Gas Distribution Plate
パフォーマンス: Micropore diameter tolerance ±0.005mm, uniformity error ±2%.
Heater Base
パフォーマンス: Resistance uniformity ≤±1%, designed for MOCVD epitaxial growth.
3. リソグラフィー & Inspection Equipment
EUV Optical Lens Base
パフォーマンス: Thermal stability ±0.01μm/°C, compatible with processes below 7nm.
Wafer Alignment Stage
パフォーマンス: Repeat positioning accuracy ±10nm, matches lithography focusing systems.
Why Partner with JiFeng Ceramics?
Material Selection
アルミナ / 窒化アルミニウム / 炭化ケイ素 / Special Alloys, compatible with diverse semiconductor process requirements.
プロセスの最適化
Precision grinding (tolerance ±0.001mm) and CVD coating for superior wear and plasma resistance.
機能統合
Embedded electrodes and sensors, matching intelligent temperature control and real-time monitoring systems.
コストメリット
Adopts domestic high-purity powder and machining technologies, 輸入ブランドよりも30%~50%安い価格でご提供します.
吉峰陶磁器










