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High-Precision Porous Ceramic Vacuum Chuck - JiFeng-Keramik

Keramische Strukturbauteile/

Poröses Siliziumkarbid-Keramikfutter

Porous silicon carbide (SiC) ceramic chuck is made from high purity powder, via reaction bonding or gel casting.
It kinda has controlled porosity but still brings strong thermal conductivity and mechanical resilience, like it’s balanced on purpose.
Das porous ceramic vacuum chuck meets SEMI F47 standards, for semiconductor tools.
Great for wafer handling, photovoltaic fabrication, and laser processing, it helps keep stable results with no contamination, even when the temperature runs high and the precision demands are strict.

  • Produktdetails
  • Technische Spezifikationen

Kernvorteile von Porous Ceramic Vacuum Chuck

Extreme temperature resistance

Long-term working temp 1600°C; thermal shock ΔT ≥ 500°C.

Precision micro-porous adsorption

Porosität 30–70 %, pore size 1–50 μm; vacuum adsorption ≥ 0.08 MPa for ultra-thin wafers.

Korrosion & Verschleißfestigkeit

Beständig gegen pH 1–14 & plasma erosion; HV10 2200–2800; service life 3× of graphite chucks.

Ultra-high flatness

≤ 0.005 mm after precision grinding.

Key Applications Of Porous Ceramic Vacuum Chuck

1.Halbleiter & Elektronik

  • Wafer bonding / temporary bonding: flatness ≤0.005 mm for 12-inch wafer thinning.
  • Lithography thermal management: temperature fluctuation ≤±0.1°C.

2.Photovoltaic & Neue Energie

  • PERC/TOPCon solar cell sintering furnace: 1600°C, breakage rate ≤0.01%.
  • SiC epitaxial tray: metal impurity ≤1 ppm for MOCVD/MBE.

3.Laser & Präzisionsbearbeitung

  • High-power laser cutting chuck: resists laser ablation ≥1 kW/cm².
  • 3D printing substrate: porous ventilation reduces powder adhesion.

4. Hochtemperatur-Industrieausrüstung

  • Sintering furnace setter: Kriechfestigkeit, load ≥50 kg/m² at 1600°C.
  • Vacuum brazing fixture: resists Ag-Cu-Ti solder; reusable ≥1000 cycles.

JiFeng Ceramics Customization Services

Pore structure

uniform / gradient / directional channels for vacuum/gas control.

Oberflächenbehandlung

CVD SiC coating, anti-oxidation SiO₂/Al₂O₃ coating.

Abmessungen

diameter φ100–φ600 mm, thickness 5–50 mm; rectangular / special shape.

Cost advantage

40–60% lower than imported brands.

ParameterDetails
Materielle ReinheitSiC ≥99.5%, free Si ≤0.5%
Porosität30%–70 % (gradient pore customizable)
Durchschnittliche Porengröße1–50 μm (Laserbohren / pore-forming agent)
Wärmeleitfähigkeit120 W/m·K (bei 25°C)
Biegefestigkeit≥150 MPa (porous structure)
Ebenheit≤0.005 mm (precision ground)
ZertifizierungenSEMI F47 (Halbleiter)

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