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High-Precision Porous Ceramic Vacuum Chuck - 吉峰陶磁器

セラミック構造部品/

多孔質炭化ケイ素セラミックチャック

Porous silicon carbide (SiC) ceramic chuck is made from high purity powder, via reaction bonding or gel casting.
It kinda has controlled porosity but still brings strong thermal conductivity and mechanical resilience, like it’s balanced on purpose.
これ porous ceramic vacuum chuck meets SEMI F47 standards, for semiconductor tools.
Great for wafer handling, photovoltaic fabrication, and laser processing, it helps keep stable results with no contamination, even when the temperature runs high and the precision demands are strict.

  • 製品詳細
  • 技術仕様

主な利点 Porous Ceramic Vacuum Chuck

Extreme temperature resistance

Long-term working temp 1600°C; thermal shock ΔT ≥ 500°C.

Precision micro-porous adsorption

気孔率 30~70%, pore size 1–50 μm; vacuum adsorption ≥ 0.08 MPa for ultra-thin wafers.

腐食 & 耐摩耗性

Resists pH 1–14 & plasma erosion; HV10 2200–2800; service life 3× of graphite chucks.

Ultra-high flatness

≤ 0.005 mm after precision grinding.

Key Applications Of Porous Ceramic Vacuum Chuck

1.半導体 & エレクトロニクス

  • Wafer bonding / temporary bonding: flatness ≤0.005 mm for 12-inch wafer thinning.
  • Lithography thermal management: temperature fluctuation ≤±0.1°C.

2.Photovoltaic & 新エネルギー

  • PERC/TOPCon solar cell sintering furnace: 1600℃, breakage rate ≤0.01%.
  • SiC epitaxial tray: metal impurity ≤1 ppm for MOCVD/MBE.

3.Laser & 精密加工

  • High-power laser cutting chuck: resists laser ablation ≥1 kW/cm².
  • 3D printing substrate: porous ventilation reduces powder adhesion.

4. 高温産業機器

  • Sintering furnace setter: 耐クリープ性, load ≥50 kg/m² at 1600°C.
  • Vacuum brazing fixture: resists Ag-Cu-Ti solder; reusable ≥1000 cycles.

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Pore structure

uniform / gradient / directional channels for vacuum/gas control.

Surface treatment

CVD SiC coating, anti-oxidation SiO₂/Al₂O₃ coating.

Dimensions

diameter φ100–φ600 mm, thickness 5–50 mm; rectangular / special shape.

Cost advantage

40–60% lower than imported brands.

パラメータ詳細
材料の純度SiC ≥99.5%, free Si ≤0.5%
気孔率30%–70% (gradient pore customizable)
Average Pore Size1–50 μm (レーザー穴あけ / pore-forming agent)
熱伝導率120 W/m・K (25℃で)
曲げ強度≧150MPa (porous structure)
平面度≤0.005 mm (precision ground)
認証SEMI F47 (半導体)

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